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SIMSCAPE-EQUIVALENT MODELING AND VERIFICATION OF A GAN DEVICE SPICE BEHAVIORAL MODEL FOR PV DC–DC SYSTEM-LEVEL SIMULATION

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Volume 4, Issue 1, Pp 72-78, 2026

DOI: https://doi.org/10.61784/wjer3080

Author(s)

ZiYu QinTu Hong, Lei Shi*

Affiliation(s)

College of Automotive and Energy Engineering, Shanghai 201804, China.

Corresponding Author

Lei Shi

ABSTRACT

A Simulink/Simscape-compatible device model is developed for system-level simulation of PV DC–DC power conversion, using a vendor-provided SPICE behavioral subcircuit of the EPC2302 GaN power transistor. After an automatic translation from the SPICE netlist to a Simscape description, semantic and syntactic incompatibilities are analyzed and are found to mainly originate from representing voltage-dependent capacitances as parameterized primitive components, which introduces runtime terminal voltages into parameter evaluation and leads to compilation conflicts. To preserve the device dynamic behavior while complying with Simscape semantics, the voltage-dependent capacitances are reformulated as explicit branch-current relations at the equation level, and the smooth fitting structure of the vendor model is retained to enhance numerical robustness. A datasheet-referenced verification workflow is established to assess consistency in static conduction behavior and dynamic capacitance-related characteristics. The resulting model compiles successfully and runs stably in time-domain simulations, providing a practical foundation for system-level transient analysis and loss-trend evaluation of high-frequency GaN DC–DC converters.

KEYWORDS

Photovoltaics; DC-DC converter; Gallium nitride; Circuit simulation; SPICE; Nonlinear capacitance

CITE THIS PAPER

ZiYu Qin, Tu Hong, Lei Shi. Simscape-equivalent modeling and verification of a GaN device spice behavioral model for PV DC–DC system-level simulation. World Journal of Engineering Research. 2026, 4(1): 72-78. DOI: https://doi.org/10.61784/wjer3080.

REFERENCES

[1] Yao Yubi, Zheng Shaozhong, Yang Yang, et al. Progress and prospects of solar energy resource assessment and utilization efficiency in China. Acta Energiae Solaris Sinica, 2022, 43(10): 524-535.

[2] Xia Ziyi, Ji Haichen, Kong Jiake, et al. Design of a time-division multiplexing-based photovoltaic DMPPT system. Acta Energiae Solaris Sinica, 2025, 46(12): 288-297.

[3] Zhong Qida. Research on a bidirectional DC/DC converter and its control strategy for photovoltaic energy storage. Liuzhou: Guangxi University of Science and Technology, 2024. DOI: 10.27759/d.cnki.ggxgx.2024.000600.

[4] Qiu Zhaochuan. Research on parallel current sharing and high-frequency transformer of a photovoltaic DC collection clamped resonant DC/DC converter. Harbin: Harbin Institute of Technology, 2025. DOI: 10.27061/d.cnki.ghgdu.2025.003374.

[5] Lidow A D R M, Strydom J, et al. GaN transistors for efficient power conversion. WILEY, 2019.

[6] Xu Wenzhe. Research on a GaN-based series-resonant high-frequency-link photovoltaic microinverter. Wuhan: Huazhong University of Science and Technology, 2024. DOI: 10.27157/d.cnki.ghzku.2024.002179.

[7] Zheng Kefang. Research on a single-phase photovoltaic inverter based on gallium nitride devices. Xuzhou: China University of Mining and Technology, 2025. DOI: 10.27623/d.cnki.gzkyu.2025.000323.

[8] L Garcia-Rodriguez, V Jones, JC Balda, et al. Design of a GaN-based microinverter for photovoltaic systems. 2014 IEEE 5th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), Galway, Ireland. 2014, 1-6. DOI: 10.1109/PEDG.2014.6878639.

[9] Karimzada O, Donato G D. Design and Verification of a GaN-Based, Single Stage, Grid-Connected Three-Phase PV Inverter. IEEE Transactions on Power Electronics, 2025, 40(4): 5496-5504. DOI: 10.1109/TPEL.2024.3511270.

[10] Stubbe T, Mallwitz R, Rupp R, et al. GaN power semiconductors for PV inverter applications-Opportunities and risks. Proceedings of the CIPS 2014; 8th International Conference on Integrated Power Electronics Systems, Nuremberg/German, 2014 of Conference: VDE, 2014, 1-6.

[11] Du C, Ye R, Cai X, et al. A review on GaN HEMTs: nonlinear mechanisms and improvement methods. Journal of Semiconductors, 2023, 44(12). DOI: 10.1088/1674-4926/44/12/121801.

[12] Matthias Kasper, Dominik Bortis, Johann W Kolar. Classification and Comparative Evaluation of PV Panel-Integrated DC–DC Converter Concepts. IEEE Transactions on Power Electronics, 2014, 29(5): 2511-2526. DOI: 10.1109/TPEL.2013.2273399.

[13] Raghavendra K V G, Zeb K, Muthusamy A, et al. A Comprehensive Review of DC–DC Converter Topologies and Modulation Strategies with Recent Advances in Solar Photovoltaic Systems. Electronics 2020, 9(1): 31.

[14] Omar Abdel-Rahim, Andrii Chub, Dmitri Vinnikov, et al. DC Integration of Residential Photovoltaic Systems: A Survey. IEEE Access, 2022, 10, 66974-66991. DOI: 10.1109/ACCESS.2022.3185788.

[15] Choi WY, Lee CG. Photovoltaic panel integrated power conditioning system using a high efficiency step-up DC–DC converter. Renewable Energy, 2012, 41, 227-234. DOI: 10.1016/j.renene.2011.10.023.

[16] Wang Kangping, Tian Mofan, Li Hongchang, et al. An improved switching loss model for a 650V enhancement-mode GaN transistor. 2016 IEEE 2nd Annual Southern Power Electronics Conference (SPEC), Auckland, New Zealand. 2016, 1-6. DOI: 10.1109/SPEC.2016.7846144.

[17] Cao Haiyang, Li Bo, Chen Feiyang, et al. Voltage oscillation testing of gallium nitride switching devices based on Simulink. Experiment Technology and Management, 2025, 42(10): 130-136.

[18] Cucak D, Vasic M, García O, et al. Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure. IEEE Transactions on Power Electronics, 2017, 32(3): 2189-2202.

[19] Zhang Aixi, Zhang Lining, Tang Zhikai, et al. Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components. IEEE Transactions on Electron Devices, 2014, 61(3): 755-761.

[20] Jia Yonghao, Xu Yuehang, Wen Zhang, et al. Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 2019, 66(1): 357-363.

[21] Corporation E P C. EPC2302 – Enhancement Mode Power Transistor: eGaN? FET Datasheet: Efficient Power Conversion Corporation, 2025.

[22] Cho T, Park J, Jung S, et al. Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMT. IEEE Journal of the Electron Devices Society, 2025, 13, 638-641.

[23] Samizadeh Nikoo M, Jafari A, Perera N, et al. Measurement of Large-Signal COSS and COSS Losses of Transistors Based on Nonlinear Resonance. IEEE Transactions on Power Electronics, 2020, 35(3): 2242-2246.

[24] Huang Y, Jiang Q, Huang S, et al. In-Situ Extraction of Time-Resolved Eoss on GaN Power Device Based on a Modified Hard Switching Platform. 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Bremen, Germany, 2024, 259-262. DOI: 10.1109/ISPSD59661.2024.10579648.

[25] Hou R, Lu J, Chen D. Parasitic capacitance Eqoss loss mechanism, calculation, and measurement in hard-switching for GaN HEMTs. 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), San Antonio, TX, USA. 2018, 919-924. DOI: 10.1109/APEC.2018.8341124.

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